Yunnan Lincang Xinyuan Germanium Industry Co.Ltd(002428) 21 revealed that the “indium phosphide single crystal chip construction project” invested and invested by Huawei’s Hubble was put into operation recently. The company said that the production of the project will be conducive to the development of the company’s internal new material industry, promote the company’s transformation and upgrading to deep processing, and also play a positive role in improving the company’s profitability.
indium phosphide is the second generation semiconductor material. At present, China’s second-generation semiconductor materials mainly rely on imports Yunnan Lincang Xinyuan Germanium Industry Co.Ltd(002428) and other Chinese enterprises are trying to make breakthroughs
InP expansion project was put into operation as scheduled
According to the data, as early as February 2017, the Yunnan Lincang Xinyuan Germanium Industry Co.Ltd(002428) board of directors considered and approved Yunnan Xinyao semiconductor materials Co., Ltd. to use its own funds of 36 million yuan to implement the “50000 pieces / year 2-inch InP Single Crystal and wafer industrialization construction project”. In December 2019, Yunnan Lincang Xinyuan Germanium Industry Co.Ltd(002428) also disclosed that it would take two years to build a production line with an annual output of 1500004-inch indium phosphide single crystals. The total investment of the project is 324 million yuan. It is expected to achieve an annual operating income of 320 million yuan and a total annual average profit of 119 million yuan.
Xinyao company, a national specialized Texin “little giant”, is a holding subsidiary of Yunnan Lincang Xinyuan Germanium Industry Co.Ltd(002428) and is mainly engaged in the R & D and production of gallium arsenide and Indium Phosphide Substrates (single crystal chips). In October 2020, Xinyao semiconductor obtained the strategic investment of Huawei Hubble, accounting for 23.91%.
According to the data, by the end of 2021, Yunnan Lincang Xinyuan Germanium Industry Co.Ltd(002428) GaAs chip has a production capacity of 800000 chips / year (2-4 inches); The production capacity of InP wafer is 100000 pieces / year (2-4 inches). Last year, the yield index of gallium arsenide chips and indium phosphide chips of Xinyao company increased significantly, the product cost decreased significantly, and began to supply in batches to downstream customers. In 2021, the operating income of Xinyao company was 709772 million yuan and the operating profit was 178466 million yuan.
A semiconductor materials analyst, who declined to be named, believes that to judge whether an InP wafer project has successfully achieved mass production, output is an important indicator, and product yield is also an important indicator. Xinyao company has made good progress from the financial data.
However, Yunnan Lincang Xinyuan Germanium Industry Co.Ltd(002428) also suggests that Xinyao company still needs a certain process from completion and production to production, and may also face the risk that the release of project capacity is less than expected due to the impact of factors such as changes in market demand environment and intensified industry competition.
second generation semiconductor breakthrough
second generation semiconductor materials include indium phosphide and gallium arsenide. According to insiders, enterprises that make indium phosphide materials often do gallium arsenide business
Indium phosphide is a compound of phosphorus and indium. It is a new generation of microelectronic and optoelectronic functional materials after germanium and silicon (SI). It has many advantages, such as high saturation electron drift speed, strong radiation resistance, good thermal conductivity, high photoelectric conversion efficiency and high band gap width. It is widely used in optical communication, optoelectronic devices, high-frequency millimeter wave devices, optoelectronic integrated circuits, integrated lasers, photodetectors and other fields. Gallium arsenide has the advantages of low-temperature radiation and low-frequency noise resistance, and gallium arsenide is mainly used in the field of high-temperature and high-frequency semiconductor devices.
Gong ruijiao, semiconductor analyst of Jibang consulting, revealed that high-end indium phosphide and gallium arsenide materials are mainly used in optical communication, lasers, detectors and RF devices. Internationally, relevant production technologies and processes have been very mature. Although China has explored for many years, there are few relevant production enterprises, and it is not easy to obtain a certain market position.
As for indium phosphide, in addition to Yunnan Lincang Xinyuan Germanium Industry Co.Ltd(002428) , Dingtai core source and leading thin materials are also involved.
AXT, which is listed on NASDAQ in the United States, is splitting its Beijing Tongmei to be listed on the science and innovation board. At present, it has completed the first round of inquiry reply. Its main business is the R & D, production and sales of indium phosphide substrate, gallium arsenide substrate, germanium substrate, PBN material and other high-purity materials. The IPO application draft shows that in 2020, Beijing Tongmei’s Indium phosphide substrate has a global market share of 36%, ranking second in the world; In 2019, the global market share of gallium arsenide substrate was 13%, ranking fourth in the world. However, industry insiders revealed that the company uses American technology and should not be a local enterprise.
Zhu Hangou, senior analyst of jimicrogrid integrated circuit industry, revealed that the main ones involved in the production of gallium arsenide materials are Sanan Optoelectronics Co.Ltd(600703) , Hc Semitek Corporation(300323) and Grinm Advanced Materials Co.Ltd(600206) Sanan Optoelectronics Co.Ltd(600703) and Hc Semitek Corporation(300323) are leaders in the LED industry. They have a mature epitaxial + device industry chain and have successfully achieved self-sufficiency in gallium arsenide materials for LED.
Major suppliers of GaAs in different applications. According to yole data
The production of GaAs Materials for RF devices is a pioneering work Sanan Optoelectronics Co.Ltd(600703) ‘s San’an integration mainly provides R & D, production and manufacturing services of RF, optical technology and power electronic compound semiconductors. The latest news shows that San’an integrated production capacity is expanding, and some production capacity is gradually released. Gallium arsenide RF products have fully covered 2g-5g mobile phone PA, WiFi and other application fields. There are nearly 100 customers in China and have become the main supplier of China’s leading RF design companies. By the end of the third quarter of last year, San’an integration had achieved a sales revenue of 1.669 billion yuan.
