Strategic cooperation with Tianke Heda Kbc Corporation Ltd(688598) accelerate the expansion of the third generation semiconductor field

Kbc Corporation Ltd(688598) ushered in breakthrough progress in the expansion of the third generation semiconductor field.

On April 9, Kbc Corporation Ltd(688598) announced that based on the company's R & D and application of high-purity carbon matrix composites in the semiconductor field, the company and Beijing Tianke Heda Semiconductor Co., Ltd. (hereinafter referred to as "Tianke Heda") reached a strategic cooperation intention and signed a strategic cooperation agreement on April 8, with a cooperation period of 5 years from the date of signing the agreement.

According to the introduction of Tianke Heda's official website, it was jointly established by Xinjiang Tianfu group and the Institute of physics of the Chinese Academy of Sciences in September 2006. At present, the registered capital is 215.82 million yuan. It is a high-tech enterprise specializing in the R & D, production and sales of third-generation semiconductor silicon carbide (SIC) chips. It is one of the main manufacturers of SiC chips in the world.

It is reported that tiankeheda has a R & D center and three wholly-owned subsidiaries, covering the manufacturing of silicon carbide single crystal furnace, the preparation of silicon carbide single crystal growth raw materials and the preparation of silicon carbide single crystal substrate.

The agreement shows that with the rapid development of the third generation semiconductor industry, in order to strengthen the close connection between upstream and downstream in China, the two sides decided to work together to reach an in-depth strategic partnership on the development and application of high-purity thermal field materials, high-purity thermal insulation materials and high-purity powder materials in the third generation semiconductor field.

Specifically, based on the technical advantages in their respective materials and application fields, the two sides carried out in-depth technical exchanges and joint research and development, and jointly developed thermal field materials, thermal insulation materials and powder materials to meet the application of the third generation semiconductor field, so as to meet the needs of Tianke Heda for relevant materials Kbc Corporation Ltd(688598) will further research and develop high cost performance, high purity thermal field, high purity thermal insulation and high purity powder materials and products that meet the requirements of Tianke Heda according to the technical requirements put forward by Tianke Heda.

At the same time, Tianke Heda gave guidance to Kbc Corporation Ltd(688598) third generation semiconductor high-purity thermal field, thermal insulation, powder materials, product development direction and technical requirements, cooperated with the company in product testing and evaluation, and accelerated the progress of product development and quality improvement through application effect feedback. The two sides provide other relevant technical support for the newly developed related products and help the two sides in the cooperative development of related products in the field of third-generation semiconductors.

Kbc Corporation Ltd(688598) said that at present, the company's products are mainly used in crystalline silicon manufacturing thermal field system in photovoltaic industry. The signing of this strategic framework agreement is conducive to the promotion and application of the company's products in the third generation semiconductor field.

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