Recently, the website of the University of science and technology of China (hereinafter referred to as "University of science and technology of China") announced that the University of science and technology of China has made important progress in the field of 6G filter.
Professor Zuo Chengjie, School of microelectronics, University of science and technology of China, the research team designed and realized a high frequency (6.5 GHz) MEMS resonator with a Q value (quality factor) of more than 100000 on lithium niobate (LiNbO3) piezoelectric film. Compared with the existing work in the literature, the Q value is increased by two orders of magnitude.
The resonator is the basis of the filter. The quality factor Q describes the ability of the filter to separate adjacent frequency components in the signal. The larger the Q value, the higher the resolution of the filter.
With the development of wireless communication from 5g to beyond 5g (b5g) and 6G, the number of frequency bands will further increase and the spectrum will be more crowded, resulting in a large increase in interference frequency. Therefore, filters must be used to isolate each frequency band to avoid interference with each other - because this will exhaust battery life, reduce data speed and cause the phone to drop.
The high-Q acoustic resonator and high-performance filter required by 6G will become the key technology of wireless communication development in the next stage, and it is also the basic RF components and chips that must be independently controlled in the development of 6G technology in China.
Filters need years of accumulation from R & D to commercialization. At present, the filter technology of mobile devices is highly monopolized by American and Japanese manufacturers. This progress of China University of science and technology has undoubtedly brought dawn to solve the neck problem of RF filter and catch up with and surpass the most advanced international level.
The research results, entitled "ultra high qlithium niobate resonator at 15 degree three dimensional Euler angle", were published online on May 16 in IEEE electron device letters, a well-known journal in the field of electronic devices. Professor Zuo Chengjie of the school of microelectronics, University of science and technology of China is the corresponding author of the paper, and Dai Zhongbin, a doctoral student of the school of microelectronics, is the first author of the paper.
The research also breaks through the optimal value limit of the product of resonant frequency and Q value (f · q) resonator for the first time, and finds a new mechanism that can regulate the dielectric loss and acoustic loss of lithium niobate film, which opens up more possibilities for micro nano devices in the application fields of high-frequency wireless communication, medical ultrasonic imaging, intelligent information processing and Internet of things sensors in the future.
